? semiconductor components industries, llc, 1994 october, 2016 ? rev. 8 1 publication order number: bss63lt1/d bss63lt1g, nsvbss63lt1g high voltage transistor pnp silicon features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage v ceo ?100 vdc collector ?emitter voltage r be = 10 k v cer ?110 vdc collector current ? continuous i c ?100 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. collector 3 1 base 2 emitter sot?23 case 318 style 6 marking diagram 1 3 2 device package shipping ? ordering information bss63lt1g sot?23 (pb?free) 3000 / tape & ree l bm = device code m = date code* = pb?free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) bm m ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. nsvbss63lt1g sot?23 (pb?free) 3000 / tape & ree l www. onsemi.com
bss63lt1g, nsvbss63lt1g www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?100 adc) v (br)ceo ?100 ? ? vdc collector ?emitter breakdown voltage (i c = ?10 adc, i e = 0, r be = 10 k ) v (br)cer ?110 ? ? vdc collector ?base breakdown voltage (i e = ?10 adc, i e = 0) v (br)cbo ?110 ? ? vdc emitter ?base breakdown voltage (i e = ?10 adc) v (br)ebo ?6.0 ? ? vdc collector cutoff current (v cb = ?90 vdc, i e = 0) i cbo ? ? ?100 nadc collector cutoff current (v ce = ?110 vdc, r be = 10 k ) i cer ? ? ?10 adc emitter cutoff current (v eb = ?6.0 vdc, i c = 0) i ebo ? ? ?200 nadc on characteristics dc current gain (i c = ?10 madc, v ce = ?1.0 vdc) (i c = ?25 madc, v ce = ?1.0 vdc) h fe 30 30 ? ? ? ? ? collector ?emitter saturation voltage (i c = ?25 madc, i b = ?2.5 madc) v ce(sat) ? ? ?250 mvdc base ?emitter saturation voltage (i c = ?25 madc, i b = ?2.5 madc) v be(sat) ? ? ?900 mvdc small? signal characteristics current ?gain ? bandwidth product (i c = ?25 madc, v ce = ?5.0 vdc, f = 20 mhz) f t 50 95 ? mhz case capacitance (i e = i c = 0, v cb = ?10 vdc, f = 1.0 mhz) c c ? ? 20 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r g = 2 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina.
bss63lt1g, nsvbss63lt1g www. onsemi.com 3 typical characteristics figure 1. dc current gain figure 2. collector?emitter saturation voltage vs. collector current i c , collector current (ma) 10 0.1 0.01 10 100 1000 figure 3. base?emitter saturation voltage vs. collector current figure 4. base?emitter voltage vs. collector current i c , collector current (ma) 1000 100 10 1 0.1 0.3 0.5 0.7 0.9 1.1 figure 5. base?emitter temperature coefficient figure 6. collector saturation region h fe , dc current gain v be(sat) , base?emitter saturation voltage (v) v ce , collector?emitter voltage (v) 1 100 1000 v ce = ?5 v 25 c ?55 c 150 c i c , collector current (ma) 10 0.1 0.01 0.1 v ce(sat) , collector?emitter saturation voltage (v) 1 100 100 0 i c /i b = 10 25 c ?55 c 150 c 1 i c /i b = 10 25 c ?55 c 150 c 0.2 0.4 0.6 0.8 1.0 i c , collector current (ma) 100 0 100 10 1 0.3 0.5 0.7 0.9 v be(sat) , base?emitter saturation voltage (v) 25 c ?55 c 150 c 0.2 0.4 0.6 0.8 1.0 v ce = ?5 v i c , collector current (ma) 1000 100 10 1 1.0 1.4 1.8 2.2 2.6 vbe , temperature coefficient (mv/ c) i c /i b = 10 t a = ?55 c to 150 c 1.2 1.6 2.0 2.4 0.1 i c , collector current (ma) 10 0 10 1 0.1 0 0.2 0.4 0.6 0.8 i c = 200 ma t a = 25 c 0.1 0.3 0.5 0.7 0.01 i c = 10 ma 1.0 0.9 100 ma 50 ma 20 ma
bss63lt1g, nsvbss63lt1g www. onsemi.com 4 typical characteristics v ce , collector emitter voltage (v) i c , collector current (ma) single pulse test at t a = 25 c 1 s 100 s 10 ms figure 7. capacitance figure 8. current?gain bandwidth product i c , collector current (ma) 100 20 10 2 0.5 0.2 0.1 1 10 100 1000 current?gain bandwidth product (mhz) figure 9. safe operating area v r , reverse voltage (v) 100 40 20 10 2 1 0.4 0.1 1 10 100 c, capacitance (pf) 6 4 0.2 t j = 25 c c ibo c obo 0.6 60 1000 10 1 0.1 0.1 10 1000 100 100 1 v ce = ?5 v t j = 25 c 15 50
bss63lt1g, nsvbss63lt1g www. onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bss63lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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